Northrop Grumman’s leadership in the Microelectronics Commons program led to the production of a breakthrough GaN chip that sets the pace for defense and commercial markets.
Microscope photo of Northrop Grumman’s high-frequency GaN microwave chip. (Photo Credit: Northrop Grumman)
Northrop Grumman has built a new Gallium Nitride (GaN) chip that sets a new performance standard for military and commercial applications. The chip fully leverages the W-band spectrum, a range of very high-frequency radio waves that enable microchips to send and receive more detailed information. Developed and market-ready in under six months, this breakthrough enables military radar systems to send secure data wirelessly and quickly via satellites, while also supporting the next generation of 5G/6G connectivity.
The chip acts like a tiny, superefficient “brain” that strengthens wireless signals—making them clearer and faster—providing the military with secure communications and letting everyday devices enjoy quicker, more reliable connections. Its compact and low-cost design replaces bulky, power-hungry gear and helps keep the country ahead in next-generation wireless technology.
Manufactured at Northrop Grumman’s semiconductor facility in California, this chip was developed quickly through a project with the Microelectronics Commons California DREAMS hub, where Northrop Grumman is a leading partner. This program is funded by the Office of the Under Secretary of War for Research and Engineering (OUSW(R&E)) as part of a unique industry-government-academia partnership designed to keep the nation at the forefront of microchip innovation and deliver breakthrough technology to the field faster.
